Ferro4EdgeAI is pleased to support Symposium K: “Ferroelectric Materials and Devices for Next-Generation Computing” at the 2026 Fall Meeting of the European Materials Research Society (E-MRS), taking place from 14–17 September 2026 at Warsaw University of Technology, Poland.
The symposium will bring together researchers working on ferroelectric materials, device physics, and emerging computing technologies, with a strong focus on hafnia-based ferroelectrics and their applications in next-generation electronics, memory technologies, and edge AI systems.
Organised by Sara Gonzalez (INL-CNRS), Nicholas Barrett (CEA IRAMIS), and Ruben Alcala (NaMLab), the symposium aims to foster interdisciplinary exchanges between materials scientists, device engineers, and industry researchers working on innovative ferroelectric-based technologies.
Topics covered during the symposium include:
Hafnium oxide–based ferroelectrics and related materials
Polarization mechanisms and domain dynamics
Reliability and stability of ferroelectric devices
Interface engineering and CMOS-compatible integration
Advanced characterization and modelling approaches
Ferroelectric-based memories, logic devices, and analog computing elements
Materials challenges for future applications
Particular emphasis will be placed on low-power and energy-efficient computing architectures, including applications for neuromorphic computing and edge AI, which are central themes within the Ferro4EdgeAI project.
Students and early-career researchers are especially encouraged to participate and contribute to discussions shaping the future of ferroelectric materials and next-generation computing technologies.
Abstract submission deadline: 1 June 2026
More information about the symposium and submission process is available on the official E-MRS website:
E-MRS Symposium K – Ferroelectric Materials and Devices for Next-Generation Computing