Ferro4EdgeAI Highlighted in EE Times Europe: NV Solutions for Edge AI
Ferro4EdgeAI was recently featured in EE Times Europe, highlighting the consortium’s work on non-volatile (NV) memory solutions for Edge AI. The article, titled “For Leti and ST, the fastest way to edge AI is through the memory wall”, brought together insights from François Andrieu (CEA Leti) and Giuseppe Desoli (STMicroelectronics), both key partners of Ferro4EdgeAI.
The discussion focused on overcoming the “memory wall” and enabling in-memory computing, which is critical for fast, energy-efficient AI inference at the edge. NV memories such as FeRAM, PCM, and MRAM can offer high-speed processing while dramatically reducing power consumption, making them ideal for edge AI applications.
This recognition in EE Times Europe underscores Ferro4EdgeAI’s role as a leading consortium in advancing AI-ready memory technologies, bridging the gap between storage and computation for next-generation devices.