Stay up to date with Ferro4EdgeAI and the latest developments, breakthroughs, and events in the world of Edge AI. Our news section is your go-to source for all project updates, including achievements, milestones, and upcoming events. Join our community and be a part of the conversation shaping the future of energy-efficient Edge AI.

Ferro4EdgeAI Highlighted in EE Times Europe: NV Solutions for Edge AI
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Ferro4EdgeAI Highlighted in EE Times Europe: NV Solutions for Edge AI

Ferro4EdgeAI was recently featured in EE Times Europe, highlighting the consortium’s work on non-volatile (NV) memory solutions for Edge AI. The article, titled “For Leti and ST, the fastest way to edge AI is through the memory wall”, brought together insights from François Andrieu (CEA Leti) and Giuseppe Desoli (STMicroelectronics), both key partners of Ferro4EdgeAI.

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Collaboration CEA Leti FMC to Advance FeRAM Cache+ Chiplet for AI Systems
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Collaboration CEA Leti FMC to Advance FeRAM Cache+ Chiplet for AI Systems

Two leading Ferro4EdgeAI partners, CEA Leti and FMC, have announced a strategic collaboration to develop FMC’s Cache+ chiplet, a breakthrough in high-density, low-power memory for next-generation AI systems. This innovative technology leverages 1T-1C FeRAMs based on HfZrO₂, offering a compelling alternative to standard SRAMs.

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Participation in the International School of Oxide Electronics
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Participation in the International School of Oxide Electronics

Somnath-Dadabhau Kale (a post-doctoral researcher at CEA IRAMIS) and Eun Jin Koh (a PhD student at CEA IRAMIS) participated in the International School of Oxide Electronics 2025 (ISOE 2025), held from July 8–18 at the Institut d’Etudes Scientifiques de Cargèse (Cargèse, France).

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Ferro4EdgeAI and ANR-DFG D3PO Projects Highlighted at ISAF 2025
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Ferro4EdgeAI and ANR-DFG D3PO Projects Highlighted at ISAF 2025

At the International Symposium on Applications of Ferroelectrics (ISAF 2025) in Graz, Austria, our laboratory was represented by PhD student Tom Iung, who delivered an oral presentation titled "Oxygen Vacancy Distribution and Phase Composition in Scaled Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors."

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Scaling Ferroelectrics: Breakthroughs in HfO₂-Based Memory at E-MRS Strasbourg
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Scaling Ferroelectrics: Breakthroughs in HfO₂-Based Memory at E-MRS Strasbourg

The E-MRS 2025 Spring Meeting held in Strasbourg from May 26–30, 2025, showcased ground breaking advancements in materials science across 23 symposia. Among these, Symposium H, dedicated to hafnia-based ferroelectrics, stood out for its strong participation from both academia and industry, reflecting the growing importance of HfO₂-based materials in next-generation memory and logic devices

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Upcoming Presentation at MOCAST 2025
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Upcoming Presentation at MOCAST 2025

Chong Peng, a PhD student from NaMLab, will be presenting at the 14th International Conference on Modern Circuits and Systems Technologies (MOCAST 2025) in Dresden, Germany

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Presentation at E-MRS 2025 Spring Meeting
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Presentation at E-MRS 2025 Spring Meeting

Athira Sunil, a PhD student from NaMLab, participated in the European Materials Research Society (E-MRS) 2025 Spring Meeting in Strasbourg, France, where she presented her research titled "On the retention stability of thickness scaled HfxZr1-xO2 ferroelectric capacitors for multilevel applications."

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Ferro4EdgeAI Partner Update: CEA-Leti Launches FAMES Pilot Line to Advance European Semiconductor Innovation
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Ferro4EdgeAI Partner Update: CEA-Leti Launches FAMES Pilot Line to Advance European Semiconductor Innovation

We are excited to highlight Ferro4EdgeAI partner CEA-Leti's pivotal role in the launch of the FAMES Pilot Line, a groundbreaking initiative supported by the EU Chips Act. This project marks a significant step towards enhancing Europe’s semiconductor capabilities and securing technological sovereignty in a critical industry.

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70th Annual IEEE International Electron Devices Meeting in San Francisco, CA, USA 7-11 December 2024
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70th Annual IEEE International Electron Devices Meeting in San Francisco, CA, USA 7-11 December 2024

IEDM is the most important international forum for the presentation of technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. This year, more than 2,000 researchers, students, and industry professionals attended to discuss advancements in solid-state technologies

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Ferro4EdgeAI at CMD31 2024
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Ferro4EdgeAI at CMD31 2024

Ferro4EdgeAI participated at the General Conference of the Condensed Matter Division, in Brava, Portugal. The European Physical Society is a colloquium on ‘Emergent Ferroelectrics’

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