Stay up to date with Ferro4EdgeAI and the latest developments, breakthroughs, and events in the world of Edge AI. Our news section is your go-to source for all project updates, including achievements, milestones, and upcoming events. Join our community and be a part of the conversation shaping the future of energy-efficient Edge AI.
Great plenary meeting of Ferro4EdgeAI in Zurich hosted by SynSense in Oerlikon on 12th-13th January.
The meetings took place in the ETH AI building at Oerlikon. There were fruitful discussions and constructive input from the Ferro4EdgeAI advisory board (from IMEC, GeorgiaTech, Univ Ghent, Bosch and Univ Notre Dame).
Breakthrough FeMFET Memory Optimization Wins Best Paper at VLSI-SoC 2025, Paving the Way for More Efficient AI Hardware
At VLSI-SoC 2025 in Puerto Varas (Chile), the Electronics group from INL received the Best Paper Award for their work "Exploring Enhancements to 1T1C FeMFET Bitcells with a Versatile DTCO Methodology".
PhD Opportunity: Radiation Effects in Hafnia-Based Ferroelectric Memories for Edge AI
The emergence of hafnia-based ferroelectric (FE) memories has opened a new paradigm for ultra-low-power edge computing. Hafnia is fully compatible with CMOS technology and offers extremely low power consumption—up to three orders of magnitude lower than other emerging memory technologies.
Probing Polar Distortion in Ferroelectric HZO via XLD-PEEM at BESSY II
Ferro4edgeAI partners recently completed a beamtime campaign at the UE49-PGM SPEEM beamline of the BESSY II synchrotron in Berlin. The beamline is equipped with a photo-electron emission microscope (PEEM) dedicated to element-selective and magnetic-sensitive, spatially resolved investigations.
Strengthening ECL–TU Delft Collaboration on DTCO and System-Level Simulation
In mid-December 2025, Antoine Cauquil, a PhD student at ECL, spent a week at TU Delft. The visit proved highly successful and fruitful, featuring productive discussions, alignment on next steps, and identification of concrete follow-up actions - particularly for…
IEDM 2025 Highlights: Power, 3D Integration, and Ferroelectric Breakthroughs Shaping the Future of Electronics
IEDM 2025 8th-10th December 2025, San Francisco, CA USA - More than 600 presentations in this year’s edition of the international electron devices meeting, covering all aspects of the state of the art in today’s electronics.
New Publication: CEA/IRAMIS Advances Understanding of Oxygen Vacancies in Ferroelectric Hafnia
A new paper from CEA/IRAMIS has just been published in the Journal of Applied Physics:
“Correct quantification of oxygen vacancies in ferroelectric hafnia.”
This research, led by CEA/IRAMIS in collaboration with …
Ferro4EdgeAI First Review Meeting in Brussels
Last week, the Ferro4EdgeAI consortium had their first review meeting on September 25, bringing together the project partners, the representative from the European Commission and the expert reviewers.
Ferro4EdgeAI Showcases Advances at SSDM 2025
More than 1100 scientists took part in the 2025 edition of International Conference on Solid State Devices and Materials in Yokohama, Japan from 15th-18th September.
Beamtime at MAXPEEM Sheds Light on Material Parameters in HfZrO₂ FeCAPs
On their quest to elucidate the influence of the top electrode material on the oxygen vacancy distribution of ultrathin HfZrO2 FeCAPs, the LENSIS recently completed a beamtime campaign at MAXPEEM.
Ferro4EdgeAI Highlighted in EE Times Europe: NV Solutions for Edge AI
Ferro4EdgeAI was recently featured in EE Times Europe, highlighting the consortium’s work on non-volatile (NV) memory solutions for Edge AI. The article, titled “For Leti and ST, the fastest way to edge AI is through the memory wall”, brought together insights from François Andrieu (CEA Leti) and Giuseppe Desoli (STMicroelectronics), both key partners of Ferro4EdgeAI.
Collaboration CEA Leti FMC to Advance FeRAM Cache+ Chiplet for AI Systems
Two leading Ferro4EdgeAI partners, CEA Leti and FMC, have announced a strategic collaboration to develop FMC’s Cache+ chiplet, a breakthrough in high-density, low-power memory for next-generation AI systems. This innovative technology leverages 1T-1C FeRAMs based on HfZrO₂, offering a compelling alternative to standard SRAMs.
Insights from SAFS 2025: Advancing Hf₀.₆Zr₀.₄O₂ Ferroelectric Research
Dr. Somnath Kale, a postdoctoral researcher from LENSIS, recently attended and presented at the IEEE South Asian Ferroelectric Symposium (SAFS 2025) held in Bengaluru, India.
Participation in the International School of Oxide Electronics
Somnath-Dadabhau Kale (a post-doctoral researcher at CEA IRAMIS) and Eun Jin Koh (a PhD student at CEA IRAMIS) participated in the International School of Oxide Electronics 2025 (ISOE 2025), held from July 8–18 at the Institut d’Etudes Scientifiques de Cargèse (Cargèse, France).
Ferro4EdgeAI and ANR-DFG D3PO Projects Highlighted at ISAF 2025
At the International Symposium on Applications of Ferroelectrics (ISAF 2025) in Graz, Austria, our laboratory was represented by PhD student Tom Iung, who delivered an oral presentation titled "Oxygen Vacancy Distribution and Phase Composition in Scaled Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors."
Micro-XRD at Diffabs/Soleil FeCAP phase composition
Adityanarayan Pandey, Lucía Pérez Ramírez, Eun Jin Koh, and Nicolas Vaxelaire (CEA Leti) recently completed micro-X-ray diffraction (μ-XRD) experiments on the DIFFABS beamline at the SOLEIL synchrotron (Saint Aubin, France).
Scaling Ferroelectrics: Breakthroughs in HfO₂-Based Memory at E-MRS Strasbourg
The E-MRS 2025 Spring Meeting held in Strasbourg from May 26–30, 2025, showcased ground breaking advancements in materials science across 23 symposia. Among these, Symposium H, dedicated to hafnia-based ferroelectrics, stood out for its strong participation from both academia and industry, reflecting the growing importance of HfO₂-based materials in next-generation memory and logic devices
Upcoming Presentation at MOCAST 2025
Chong Peng, a PhD student from NaMLab, will be presenting at the 14th International Conference on Modern Circuits and Systems Technologies (MOCAST 2025) in Dresden, Germany
Presentation at E-MRS 2025 Spring Meeting
Athira Sunil, a PhD student from NaMLab, participated in the European Materials Research Society (E-MRS) 2025 Spring Meeting in Strasbourg, France, where she presented her research titled "On the retention stability of thickness scaled HfxZr1-xO2 ferroelectric capacitors for multilevel applications."
Ferro4EdgeAI Partner Update: CEA-Leti Launches FAMES Pilot Line to Advance European Semiconductor Innovation
We are excited to highlight Ferro4EdgeAI partner CEA-Leti's pivotal role in the launch of the FAMES Pilot Line, a groundbreaking initiative supported by the EU Chips Act. This project marks a significant step towards enhancing Europe’s semiconductor capabilities and securing technological sovereignty in a critical industry.
