Ferro4EdgeAI Showcases Advances at SSDM 2025

More than 1100 scientists took part in the 2025 edition of International Conference on Solid State Devices and Materials in Yokohama, Japan from 15th-18th September. Nearly 300 oral and 177 poster presentations covered a wide range of subjects from Flash memory, through design, photonics to wide band semiconductors and, of course, ferroelectrics for logic and memory technology. The latter attracted a record participation, with not less than 5 sessions dedicated to ferroelectrics.

Conference highlights included the plenary talk by Myeong-Jae Park (SK Hynix) on the pressing need for high bandwidth memory, not only for learning but also for mass parallel processing. Jun Okuno (Sony corporation) presented an overview of recent work on ferroelectric memories including FeRAMs, NV SRAMS and MFM invertors. Zhenhong Liu (Tokyo University) and Fei Yu (Xidian university) both emphasized the key role of charge trapping at oxygen vacancies in determining imprint and degradation. Takuya Maeda’s presentation on Recent Advances in ferroelectric ScAIN/GaN-based High Electron Mobility Transistors also attracted much interest.

Ferro4EdgeAI was well represented by S. Martin, L. Grenouillet, L. Perez Ramirez and N. Barrett with three presentations, two posters from CEA/Iramis on Cycling voltage dependence of the oxygen vacancy concentration profile in 6 nm HfxZr1-xO2 based ferroelectric capacitors and Oxygen vacancy mobility and charge de-trapping in ultra-thin HZO-based ferroelectric capacitors as a function of annealing temperature, one oral by S. Martin (CEA/Leti) on 22nm FDSOI 7 nm Hf0.5Zr0.5O2 FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays.