Eunjin Koh and Nick Barrett completed a hard X-ray photoelectron spectroscopy (HAXPES) experiment at the BL09XU beamline of the SPring-8 synchrotron (Sayo, Japan). The beamtime was dedicated to investigating the effect of the HfO₂/ZrO₂ laminate interface on the oxygen vacancy concentration.

The IEEE Eastern Europe Ferroelectric Symposium 2026 took place in Riga, Latvia, from June 1–4, 2026, attracting over 100 scientists worldwide. Organised by the Institute of Solid State Physics, University of Latvia, and sponsored by the IEEE UFFC Society, …

The Novel High-k Workshop was held from March 24 to 26 at NaMLab in Dresden, Germany. The 20th anniversary of the discovery of ferroelectric doped HfO₂ was celebrated with 36 oral presentations, ranging from theoretical and experimental studies on ferroelectricity in HfO₂ to device applications of ferroelectric doped HfO₂.

Over 14000 scientists came together for the APS Global Physics summit held in Denver, Colorado, USA from 15^th-19^th March 2026

We are pleased to welcome Surendra Hemaram as a Postdoctoral Researcher in the Department of Quantum and Computer Engineering at Delft University of Technology (TU Delft), the Netherlands. He joined the department in January 2026.

More than 130 scientists took part in the 2026 edition of the 37th annual workshop on Fundamental Physics of Ferroelectric, in Tours, France from 2nd-5th February. 58 oral and 56 poster presentations covered a wide range on the physics of ferroelectricity and related phenomenon, with both experimental and theoretical approaches.

The meetings took place in the ETH AI building at Oerlikon. There were fruitful discussions and constructive input from the Ferro4EdgeAI advisory board (from IMEC, GeorgiaTech, Univ Ghent, Bosch and Univ Notre Dame).

At VLSI-SoC 2025 in Puerto Varas (Chile), the Electronics group from INL received the Best Paper Award for their work "Exploring Enhancements to 1T1C FeMFET Bitcells with a Versatile DTCO Methodology".

The emergence of hafnia-based ferroelectric (FE) memories has opened a new paradigm for ultra-low-power edge computing. Hafnia is fully compatible with CMOS technology and offers extremely low power consumption—up to three orders of magnitude lower than other emerging memory technologies.

Ferro4edgeAI partners recently completed a beamtime campaign at the UE49-PGM SPEEM beamline of the BESSY II synchrotron in Berlin. The beamline is equipped with a photo-electron emission microscope (PEEM) dedicated to element-selective and magnetic-sensitive, spatially resolved investigations.

In mid-December 2025, Antoine Cauquil, a PhD student at ECL, spent a week at TU Delft. The visit proved highly successful and fruitful, featuring productive discussions, alignment on next steps, and identification of concrete follow-up actions - particularly for…

IEDM 2025 8^th-10^th December 2025, San Francisco, CA USA - More than 600 presentations in this year’s edition of the international electron devices meeting, covering all aspects of the state of the art in today’s electronics.

A new paper from CEA/IRAMIS has just been published in the Journal of Applied Physics:
“Correct quantification of oxygen vacancies in ferroelectric hafnia.”
This research, led by CEA/IRAMIS in collaboration with …

Last week, the Ferro4EdgeAI consortium had their first review meeting on September 25, bringing together the project partners, the representative from the European Commission and the expert reviewers.

More than 1100 scientists took part in the 2025 edition of International Conference on Solid State Devices and Materials in Yokohama, Japan from 15th-18th September.

On their quest to elucidate the influence of the top electrode material on the oxygen vacancy distribution of ultrathin HfZrO2 FeCAPs, the LENSIS recently completed a beamtime campaign at MAXPEEM.

Ferro4EdgeAI was recently featured in EE Times Europe, highlighting the consortium’s work on non-volatile (NV) memory solutions for Edge AI. The article, titled “For Leti and ST, the fastest way to edge AI is through the memory wall”, brought together insights from François Andrieu (CEA Leti) and Giuseppe Desoli (STMicroelectronics), both key partners of Ferro4EdgeAI.

Two leading Ferro4EdgeAI partners, CEA Leti and FMC, have announced a strategic collaboration to develop FMC’s Cache+ chiplet, a breakthrough in high-density, low-power memory for next-generation AI systems. This innovative technology leverages 1T-1C FeRAMs based on HfZrO₂, offering a compelling alternative to standard SRAMs.

Dr. Somnath Kale, a postdoctoral researcher from LENSIS, recently attended and presented at the IEEE South Asian Ferroelectric Symposium (SAFS 2025) held in Bengaluru, India.

Somnath-Dadabhau Kale (a post-doctoral researcher at CEA IRAMIS) and Eun Jin Koh (a PhD student at CEA IRAMIS) participated in the International School of Oxide Electronics 2025 (ISOE 2025), held from July 8–18 at the Institut d’Etudes Scientifiques de Cargèse (Cargèse, France).