Ferro4EdgeAI at NVMTS 2026: Highlighting Advances in Ferroelectric Memories

24th Non-Volatile Memory Technology Symposium took place in Tokyo October 13-15, gathering around 100 people from the community in a context where memories (especially DRAM/HBM and 3D NAND Flash) are at the forefront of AI blooming.

Among the 35 invited talks, 10 were dedicated to ferroelectric memories, highlighting their importance of in the non-volatile memory community.

Among the 35 poster presentations, 11 were also dedicated to ferroelectric memories, evidencing the same ratio among submitted abstract.

Ferro topics covered material (mostly HZO) stack optimization, device physics up to array demonstrations and design innovations.

15 countries were represented, though 49 different organization, including Ferro4EdgeAI partners :

• NaMLab – Roberto Guido, invited speaker, who gave an excellent talk on “access rate-dependent polarization loss in ferroelectric HZO capacitors”

• INL – Damien Deleruyelle & Alexandre Boyer, poster presenter. Alexandre won the best poster award for his work on “FORC-guided physical understanding of HZO ferroelectrics for emerging FeRAM technologies”. Congrats to him!

• CEA-Leti – Laurent Grenouillet, technical committee & sessions chair

Next year NVMTS will be held in Europe. Keep that in mind for future submissions so that Ferro4EdgeAI results can be highlighted as much as possible.